[email protected]
+86 18576417887
86-18576417887
guoyaolong520
Products
  • Products
  • News
  • Manufacturer
0 item (s)
RFQ Inquiry

Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SPP06N60C3
SPP06N60C3
SPP06N60C3
Favorite Products
Share:  

SPP06N60C3

SPP06N60C3
Infineon Technologies
N-CHANNEL POWER MOSFET
Transistors - FETs, MOSFETs - Single
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Product Status
Active
Mfr
Infineon Technologies
Power Dissipation (Max)
74W (Tc)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
3.9V @ 260µA
Series
CoolMOS™
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6.2A (Tc)
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
Rds On (Max) @ Id, Vgs
750mOhm @ 3.9A, 10V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Bulk
Package / Case
TO-220-3
Related Products
NVMFS5C420NLWFT1G

onsemi
STWA30N65DM6AG

STMicroelectronics
RCX330N25

Rohm Semiconductor
2SK3058-AZ

Renesas Electronics America Inc
IRFR3707Z

Infineon Technologies
IRF740R

Harris Corporation
IPW60R180P7XKSA1

Infineon Technologies
SSM3J114TU-TE85L

Toshiba Semiconductor and Storage

Send
Support
Resources
Contact Us
Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031
5 4 3 2 1
Sitemap

©2016 - 2023 Joinwin Electronics HK Limited All rights reserved

(93638)
TOP
RFQ List ( 0 items)