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SPP100N06S2-05
SPP100N06S2-05
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SPP100N06S2-05

SPP100N06S2-05
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Through Hole
Series
OptiMOS™
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 25 V
Supplier Device Package
PG-TO220-3-1
Base Product Number
SPP100N
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
5mOhm @ 80A, 10V
Vgs (Max)
±20V
Package / Case
TO-220-3
FET Feature
-
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Package
Tube
FET Type
N-Channel
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Infineon Technologies
Drain to Source Voltage (Vdss)
55 V
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