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SPP11N65C3XKSA1
SPP11N65C3XKSA1
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SPP11N65C3XKSA1

SPP11N65C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 11A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SPP11N
Series
CoolMOS™
Package / Case
TO-220-3
Product Status
Obsolete
Mounting Type
Through Hole
Package
Tube
Drain to Source Voltage (Vdss)
650 V
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
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