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SPP16N50C3HKSA1
SPP16N50C3HKSA1
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SPP16N50C3HKSA1

SPP16N50C3HKSA1
Infineon Technologies
MOSFET N-CH 560V 16A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Vgs(th) (Max) @ Id
3.9V @ 675µA
Vgs (Max)
±20V
Package / Case
TO-220-3
Power Dissipation (Max)
160W (Tc)
Mfr
Infineon Technologies
Product Status
Obsolete
Series
CoolMOS™
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-TO220-3-1
Rds On (Max) @ Id, Vgs
280mOhm @ 10A, 10V
Base Product Number
SPP16N
Package
Tube
Drain to Source Voltage (Vdss)
560 V
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Mounting Type
Through Hole
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