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SPP20N60S5

SPP20N60S5
Infineon Technologies
MOSFET N-CH 650V 20A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Mounting Type
Through Hole
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
Power Dissipation (Max)
208W (Tc)
Base Product Number
SPP20N
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
103 nC @ 10 V
Vgs (Max)
±20V
Mfr
Infineon Technologies
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 13A, 10V
Series
CoolMOS™
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Vgs(th) (Max) @ Id
5.5V @ 1mA
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