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STB21N65M5
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STB21N65M5
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STB21N65M5

STB21N65M5
STMicroelectronics
MOSFET N-CH 650V 17A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
MDmesh™ V
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 100 V
Rds On (Max) @ Id, Vgs
190mOhm @ 8.5A, 10V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Mfr
STMicroelectronics
Product Status
Active
Operating Temperature
150°C (TJ)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
5V @ 250µA
Power Dissipation (Max)
125W (Tc)
Mounting Type
Surface Mount
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Technology
MOSFET (Metal Oxide)
FET Feature
-
Supplier Device Package
D2PAK
Drain to Source Voltage (Vdss)
650 V
Vgs (Max)
±25V
Base Product Number
STB21
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