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SUP85N10-10-GE3
SUP85N10-10-GE3
SUP85N10-10-GE3
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SUP85N10-10-GE3

SUP85N10-10-GE3
Vishay Siliconix
MOSFET N-CH 100V 85A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Power Dissipation (Max)
3.75W (Ta), 250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
3V @ 250µA
Package
Tube
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Mfr
Vishay Siliconix
Series
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6550 pF @ 25 V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 30A, 10V
Base Product Number
SUP85
FET Feature
-
Package / Case
TO-220-3
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