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TK10A80W-S4X
TK10A80W-S4X
TK10A80W-S4X
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TK10A80W-S4X

TK10A80W-S4X
MOSFET N-CH 800V 9.5A TO220SIS
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta)
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
150°C
Product Status
Active
Base Product Number
TK10A80
Package / Case
TO-220-3 Full Pack
Package
Tube
Vgs(th) (Max) @ Id
4V @ 450µA
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
FET Feature
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Power Dissipation (Max)
40W (Tc)
Rds On (Max) @ Id, Vgs
550mOhm @ 4.8A, 10V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 300 V
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