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TPH1R403NL-L1Q
TPH1R403NL-L1Q
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TPH1R403NL-L1Q

TPH1R403NL-L1Q
MOSFET N-CH 30V 60A 8SOP
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
FET Type
N-Channel
Mounting Type
Surface Mount
Base Product Number
TPH1R403
Product Status
Active
Supplier Device Package
8-SOP Advance (5x5)
Power Dissipation (Max)
1.6W (Ta), 64W (Tc)
Operating Temperature
150°C (TJ)
Mfr
Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C
60A (Ta)
Rds On (Max) @ Id, Vgs
1.4mOhm @ 30A, 10V
Vgs (Max)
±20V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Series
U-MOSVIII-H
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.3V @ 500µA
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Drain to Source Voltage (Vdss)
30 V
Package / Case
8-PowerVDFN
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