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VMO550-01F
VMO550-01F
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VMO550-01F

VMO550-01F
IXYS
MOSFET N-CH 100V 590A Y3-DCB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Vgs(th) (Max) @ Id
6V @ 110mA
Drain to Source Voltage (Vdss)
100 V
FET Type
N-Channel
Mounting Type
Chassis Mount
Mfr
IXYS
Vgs (Max)
±20V
Series
HiPerFET™
Current - Continuous Drain (Id) @ 25°C
590A (Tc)
Supplier Device Package
Y3-DCB
Input Capacitance (Ciss) (Max) @ Vds
50000 pF @ 25 V
Power Dissipation (Max)
2200W (Tc)
Package / Case
Y3-DCB
Base Product Number
VMO550
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs
2000 nC @ 10 V
Operating Temperature
-40°C ~ 150°C (TJ)
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
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